IDB30E120ATMA1 - DIODE GEN PURP 1.2KV 50A TO263-3

Manufacturer Bilang Bahagi

IDB30E120ATMA1

Internal Bilang Bahagi

AX-IDB30E120ATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

DIODE GEN PURP 1.2KV 50A TO263-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

348025 Pieces

reference Presyo

~~USD 0.806142~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IDB30E120ATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IDB30E120ATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IDB30E120ATMA1

tagagawa : Infineon Technologies

paglalarawan : DIODE GEN PURP 1.2KV 50A TO263-3

serye : -

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 1200V

Kasalukuyang - Average na Rectified (Io) : 50A (DC)

Boltahe - Ipasa (Vf) (Max) @ Kung : 2.15V @ 30A

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 243ns

Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 1200V

Capacitance @ Vr, F : -

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Package ng Tagabigay ng Device : PG-TO263-3

Operating temperatura - Junction : -55°C ~ 150°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IDB3 , IDB30E1

Mga dokumento para sa IDB30E120ATMA1

datasheets : IDB30E120ATMA1.pdf

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