1N5407GHB0G - DIODE GEN PURP 800V 3A DO201AD

Manufacturer Bilang Bahagi

1N5407GHB0G

Internal Bilang Bahagi

AX-1N5407GHB0G

tagagawa

Taiwan Semiconductor Corporation

Maikling Paglalarawan

DIODE GEN PURP 800V 3A DO201AD

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

5730470 Pieces

reference Presyo

~~USD 0.04896~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung 1N5407GHB0G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 1N5407GHB0G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 1N5407GHB0G

tagagawa : Taiwan Semiconductor Corporation

paglalarawan : DIODE GEN PURP 800V 3A DO201AD

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 800V

Kasalukuyang - Average na Rectified (Io) : 3A

Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 3A

Bilis : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 800V

Capacitance @ Vr, F : 25pF @ 4V, 1MHz

Uri ng Pag-mount : Through Hole

Pakete / Kaso : DO-201AD, Axial

Package ng Tagabigay ng Device : DO-201AD

Operating temperatura - Junction : -55°C ~ 150°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 1N5 , 1N540

Mga dokumento para sa 1N5407GHB0G

datasheets : 1N5407GHB0G.pdf

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