ES1JLHM2G - DIODE GEN PURP 600V 1A SUB SMA

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
DIODE GEN PURP 600V 1A SUB SMA
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
6233095 Pieces
reference Presyo
USD 0.045012
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung ES1JLHM2G sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa ES1JLHM2G

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : ES1JLHM2G
tagagawa : Taiwan Semiconductor Corporation
paglalarawan : DIODE GEN PURP 600V 1A SUB SMA
serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : Sub SMA
Operating temperatura - Junction : -55°C ~ 150°C
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : ES1 , ES1J

Mga dokumento para sa ES1JLHM2G

datasheets : ES1JLHM2G.pdf

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