EPC2016C - GANFET TRANS 100V 18A BUMPED DIE
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-EPC2016C
tagagawa
Maikling Paglalarawan
GANFET TRANS 100V 18A BUMPED DIE
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
445330 Pieces
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung EPC2016C sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Mismong para sa EPC2016C
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi :
EPC2016C
tagagawa :
EPC
paglalarawan :
GANFET TRANS 100V 18A BUMPED DIE
serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
18A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 11A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 5V
Vgs (Max) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die
Pakete / Kaso :
Die
timbang :
-
kalagayan :
Bago at orihinal na
Mga dokumento para sa EPC2016C
datasheets :
EPC2016C.pdf
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