IRFB31N20DPBF - MOSFET N-CH 200V 31A TO-220AB

Manufacturer Bilang Bahagi

IRFB31N20DPBF

Internal Bilang Bahagi

AX-IRFB31N20DPBF

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 200V 31A TO-220AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

194830 Pieces

reference Presyo

~~USD 1.44~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRFB31N20DPBF sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IRFB31N20DPBF

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IRFB31N20DPBF

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 200V 31A TO-220AB

serye : HEXFET®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 31A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 82 mOhm @ 18A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2370pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 3.1W (Ta), 200W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220AB

Pakete / Kaso : TO-220-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IRFB , IRFB31

Mga dokumento para sa IRFB31N20DPBF

datasheets : IRFB31N20DPBF.pdf

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