EPC2107ENGRT - GAN TRANS 3N-CH 100V BUMPED DIE

Manufacturer Bilang Bahagi

EPC2107ENGRT

Internal Bilang Bahagi

AX-EPC2107ENGRT

tagagawa

EPC

Maikling Paglalarawan

GAN TRANS 3N-CH 100V BUMPED DIE

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

538710 Pieces

reference Presyo

~~USD 0.5208~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung EPC2107ENGRT sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa EPC2107ENGRT

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : EPC2107ENGRT

tagagawa : EPC

paglalarawan : GAN TRANS 3N-CH 100V BUMPED DIE

serye : eGaN®

Katayuan ng Bahagi : Active

Uri ng FET : 3 N-Channel (Half Bridge + Synchronous Bootstrap)

Tampok ng FET : GaNFET (Gallium Nitride)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.7A, 500mA

Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V

Kapangyarihan - Max : -

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 9-VFBGA

Package ng Tagabigay ng Device : 9-BGA (1.35x1.35)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : EPC2 , EPC210

Mga dokumento para sa EPC2107ENGRT

datasheets : EPC2107ENGRT.pdf

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