IGT60R190D1SATMA1 - IC GAN FET 600V 23A 8HSOF

Manufacturer Bilang Bahagi

IGT60R190D1SATMA1

Internal Bilang Bahagi

AX-IGT60R190D1SATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

IC GAN FET 600V 23A 8HSOF

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

53295 Pieces

reference Presyo

~~USD 5.263446~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IGT60R190D1SATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IGT60R190D1SATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IGT60R190D1SATMA1

tagagawa : Infineon Technologies

paglalarawan : IC GAN FET 600V 23A 8HSOF

serye : CoolGaN™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : GaNFET (Gallium Nitride)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12.5A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 960µA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Input Capacitance (Ciss) (Max) @ Vds : 157pF @ 400V

Tampok ng FET : -

Power Dissipation (Max) : 55.5W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PG-HSOF-8-3

Pakete / Kaso : 8-PowerSFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IGT60 , IGT60R19

Mga dokumento para sa IGT60R190D1SATMA1

datasheets : IGT60R190D1SATMA1.pdf

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