APTM120DA30CT1G - MOSFET N-CH 1200V 31A SP1

Manufacturer Bilang Bahagi

APTM120DA30CT1G

Internal Bilang Bahagi

AX-APTM120DA30CT1G

tagagawa

Microsemi Corporation

Maikling Paglalarawan

MOSFET N-CH 1200V 31A SP1

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

17864 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung APTM120DA30CT1G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa APTM120DA30CT1G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : APTM120DA30CT1G

tagagawa : Microsemi Corporation

paglalarawan : MOSFET N-CH 1200V 31A SP1

serye : POWER MOS 8™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 31A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs : 560nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 14560pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 657W (Tc)

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Package ng Tagabigay ng Device : SP1

Pakete / Kaso : SP1

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : APTM1 , APTM120

Mga dokumento para sa APTM120DA30CT1G

datasheets : APTM120DA30CT1G.pdf

Kaugnay na mga produkto para sa APTM120DA30CT1G Microsemi Corporation

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