DMN3016LDN-13 - MOSFET 2 N-CH 9.2A VDFN3030-8

Manufacturer Bilang Bahagi

DMN3016LDN-13

Internal Bilang Bahagi

AX-DMN3016LDN-13

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET 2 N-CH 9.2A VDFN3030-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

2312590 Pieces

reference Presyo

~~USD 0.12132~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN3016LDN-13 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN3016LDN-13

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN3016LDN-13

tagagawa : Diodes Incorporated

paglalarawan : MOSFET 2 N-CH 9.2A VDFN3030-8

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : -

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9.2A (Ta)

Rds On (Max) @ Id, Vgs : 20 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 11.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 1415pF @ 15V

Kapangyarihan - Max : -

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerVDFN

Package ng Tagabigay ng Device : V-DFN3030-8 (Type J)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN3 , DMN301

Mga dokumento para sa DMN3016LDN-13

datasheets : DMN3016LDN-13.pdf

Kaugnay na mga produkto para sa DMN3016LDN-13 Diodes Incorporated

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