NSB8ATHE3_A/P - DIODE GEN PURP 50V 8A TO263AB

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
DIODE GEN PURP 50V 8A TO263AB
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
643550 Pieces
reference Presyo
USD 0.43596
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung NSB8ATHE3_A/P sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa NSB8ATHE3_A/P

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : NSB8ATHE3_A/P
tagagawa : Vishay Semiconductor Diodes Division
paglalarawan : DIODE GEN PURP 50V 8A TO263AB
serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 8A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -55°C ~ 150°C
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : NSB8 , NSB8AT

Mga dokumento para sa NSB8ATHE3_A/P

datasheets : NSB8ATHE3_A/P.pdf

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