BSB165N15NZ3GXUMA1 - MOSFET N-CH 150V 9A WDSON-2

Manufacturer Bilang Bahagi

BSB165N15NZ3GXUMA1

Internal Bilang Bahagi

AX-BSB165N15NZ3GXUMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 150V 9A WDSON-2

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

274305 Pieces

reference Presyo

~~USD 1.022802~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSB165N15NZ3GXUMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSB165N15NZ3GXUMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSB165N15NZ3GXUMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 150V 9A WDSON-2

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 150V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Ta), 45A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 8V, 10V

Rds On (Max) @ Id, Vgs : 16.5 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 75V

Tampok ng FET : -

Power Dissipation (Max) : 2.8W (Ta), 78W (Tc)

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : MG-WDSON-2, CanPAK M™

Pakete / Kaso : 3-WDSON

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSB165 , BSB165N15

Mga dokumento para sa BSB165N15NZ3GXUMA1

datasheets : BSB165N15NZ3GXUMA1.pdf

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