IRF6898MTR1PBF - MOSFET N-CH 25V 35A DIRECTFET

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 25V 35A DIRECTFET
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
15320 Pieces
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRF6898MTR1PBF sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa IRF6898MTR1PBF

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : IRF6898MTR1PBF
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 25V 35A DIRECTFET
serye : HEXFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 35A (Ta), 213A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.1 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 4.5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 5435pF @ 13V
Tampok ng FET : Schottky Diode (Body)
Power Dissipation (Max) : 2.1W (Ta), 78W (Tc)
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : DIRECTFET™ MX
Pakete / Kaso : DirectFET™ Isometric MX
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : IRF6 , IRF6898

Mga dokumento para sa IRF6898MTR1PBF

datasheets : IRF6898MTR1PBF.pdf

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