BSZ22DN20NS3GATMA1 - MOSFET N-CH 200V 7A 8TSDSON

Manufacturer Bilang Bahagi

BSZ22DN20NS3GATMA1

Internal Bilang Bahagi

AX-BSZ22DN20NS3GATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 200V 7A 8TSDSON

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1119130 Pieces

reference Presyo

~~USD 0.250698~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSZ22DN20NS3GATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSZ22DN20NS3GATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSZ22DN20NS3GATMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 200V 7A 8TSDSON

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 225 mOhm @ 3.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 13µA

Gate Charge (Qg) (Max) @ Vgs : 5.6nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 430pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : 34W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PG-TSDSON-8

Pakete / Kaso : 8-PowerTDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSZ22D , BSZ22DN20

Mga dokumento para sa BSZ22DN20NS3GATMA1

datasheets : BSZ22DN20NS3GATMA1.pdf

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