BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON

Manufacturer Bilang Bahagi

BSG0810NDIATMA1

Internal Bilang Bahagi

AX-BSG0810NDIATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET 2N-CH 25V 19A/39A 8TISON

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

417080 Pieces

reference Presyo

~~USD 0.672672~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSG0810NDIATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSG0810NDIATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSG0810NDIATMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET 2N-CH 25V 19A/39A 8TISON

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Asymmetrical

Tampok ng FET : Logic Level Gate, 4.5V Drive

Drain sa Source Voltage (Vdss) : 25V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A, 39A

Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 1040pF @ 12V

Kapangyarihan - Max : 2.5W

Temperatura ng pagpapatakbo : -55°C ~ 155°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerTDFN

Package ng Tagabigay ng Device : PG-TISON-8

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSG08 , BSG0810

Mga dokumento para sa BSG0810NDIATMA1

datasheets : BSG0810NDIATMA1.pdf

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