IMBD4448-HE3-08 - DIODE GEN PURP 75V 150MA SOT23

Manufacturer Bilang Bahagi

IMBD4448-HE3-08

Internal Bilang Bahagi

AX-IMBD4448-HE3-08

tagagawa

Vishay Semiconductor Diodes Division

Maikling Paglalarawan

DIODE GEN PURP 75V 150MA SOT23

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

10489160 Pieces

reference Presyo

~~USD 0.026748~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IMBD4448-HE3-08 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IMBD4448-HE3-08

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IMBD4448-HE3-08

tagagawa : Vishay Semiconductor Diodes Division

paglalarawan : DIODE GEN PURP 75V 150MA SOT23

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 75V

Kasalukuyang - Average na Rectified (Io) : 150mA

Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 10mA

Bilis : Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr) : 4ns

Kasalukuyang - Reverse Leakage @ Vr : 2.5µA @ 70V

Capacitance @ Vr, F : -

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

Package ng Tagabigay ng Device : SOT-23

Operating temperatura - Junction : 150°C (Max)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IMBD4 , IMBD444

Mga dokumento para sa IMBD4448-HE3-08

datasheets : IMBD4448-HE3-08.pdf

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