GP1M009A090N - MOSFET N-CH 900V 9.5A TO3PN

Manufacturer Bilang Bahagi

GP1M009A090N

Internal Bilang Bahagi

AX-GP1M009A090N

tagagawa

Global Power Technologies Group

Maikling Paglalarawan

MOSFET N-CH 900V 9.5A TO3PN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

21136 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung GP1M009A090N sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa GP1M009A090N

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : GP1M009A090N

tagagawa : Global Power Technologies Group

paglalarawan : MOSFET N-CH 900V 9.5A TO3PN

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 900V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9.5A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 4.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2324pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 312W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-3PN

Pakete / Kaso : TO-3P-3, SC-65-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : GP1M , GP1M00

Mga dokumento para sa GP1M009A090N

datasheets : GP1M009A090N.pdf

Kaugnay na mga produkto para sa GP1M009A090N Global Power Technologies Group

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