RD3H045SPFRATL - RD3H045SPFRA IS A POWER MOSFET W

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
RD3H045SPFRA IS A POWER MOSFET W
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
931410 Pieces
reference Presyo
USD 0.301224
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung RD3H045SPFRATL sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa RD3H045SPFRATL

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : RD3H045SPFRATL
tagagawa : Rohm Semiconductor
paglalarawan : RD3H045SPFRA IS A POWER MOSFET W
serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 45V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 15W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : TO-252
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : RD3H , RD3H045

Mga dokumento para sa RD3H045SPFRATL

datasheets : RD3H045SPFRATL.pdf

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