STI11NM80 - MOSFET N-CH 800V 11A I2PAK-3

Manufacturer Bilang Bahagi

STI11NM80

Internal Bilang Bahagi

AX-STI11NM80

tagagawa

STMicroelectronics

Maikling Paglalarawan

MOSFET N-CH 800V 11A I2PAK-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

110095 Pieces

reference Presyo

~~USD 2.54826~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung STI11NM80 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa STI11NM80

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : STI11NM80

tagagawa : STMicroelectronics

paglalarawan : MOSFET N-CH 800V 11A I2PAK-3

serye : MDmesh™

Katayuan ng Bahagi : Not For New Designs

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 800V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 400 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 43.6nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1630pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 150W (Tc)

Temperatura ng pagpapatakbo : -65°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : I2PAK (TO-262)

Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : STI , STI1

Mga dokumento para sa STI11NM80

datasheets : STI11NM80.pdf

Kaugnay na mga produkto para sa STI11NM80 STMicroelectronics

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