IDB30E60ATMA1 - DIODE GEN PURP 600V 52.3A TO263

Manufacturer Bilang Bahagi

IDB30E60ATMA1

Internal Bilang Bahagi

AX-IDB30E60ATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

DIODE GEN PURP 600V 52.3A TO263

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

340385 Pieces

reference Presyo

~~USD 0.824238~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IDB30E60ATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IDB30E60ATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IDB30E60ATMA1

tagagawa : Infineon Technologies

paglalarawan : DIODE GEN PURP 600V 52.3A TO263

serye : -

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 600V

Kasalukuyang - Average na Rectified (Io) : 52.3A (DC)

Boltahe - Ipasa (Vf) (Max) @ Kung : 2V @ 30A

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 126ns

Kasalukuyang - Reverse Leakage @ Vr : 50µA @ 600V

Capacitance @ Vr, F : -

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Package ng Tagabigay ng Device : PG-TO263-3-2

Operating temperatura - Junction : -40°C ~ 175°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IDB3 , IDB30E

Mga dokumento para sa IDB30E60ATMA1

datasheets : IDB30E60ATMA1.pdf

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