SI5915DC-T1-E3 - MOSFET 2P-CH 8V 3.4A 1206-8

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET 2P-CH 8V 3.4A 1206-8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
29120 Pieces
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI5915DC-T1-E3 sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa SI5915DC-T1-E3

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : SI5915DC-T1-E3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET 2P-CH 8V 3.4A 1206-8
serye : TrenchFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : 2 P-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 8V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3.4A
Rds On (Max) @ Id, Vgs : 70 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Kapangyarihan - Max : 1.1W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-SMD, Flat Lead
Package ng Tagabigay ng Device : 1206-8 ChipFET™
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : SI59 , SI5915D

Mga dokumento para sa SI5915DC-T1-E3

datasheets : SI5915DC-T1-E3.pdf

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