ALD212900PAL - MOSFET 2N-CH 10.6V 0.08A 8DIP

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET 2N-CH 10.6V 0.08A 8DIP
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
94270 Pieces
reference Presyo
USD 2.976
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung ALD212900PAL sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa ALD212900PAL

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : ALD212900PAL
tagagawa : Advanced Linear Devices Inc.
paglalarawan : MOSFET 2N-CH 10.6V 0.08A 8DIP
serye : EPAD®, Zero Threshold™
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual) Matched Pair
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 10.6V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 80mA
Rds On (Max) @ Id, Vgs : 14 Ohm
Vgs (th) (Max) @ Id : 20mV @ 20µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 30pF @ 5V
Kapangyarihan - Max : 500mW
Temperatura ng pagpapatakbo : 0°C ~ 70°C (TJ)
Uri ng Pag-mount : Through Hole
Pakete / Kaso : 8-DIP (0.300", 7.62mm)
Package ng Tagabigay ng Device : 8-PDIP
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : ALD2 , ALD212

Mga dokumento para sa ALD212900PAL

datasheets : ALD212900PAL.pdf

Kaugnay na mga produkto para sa ALD212900PAL Advanced Linear Devices Inc.

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