SCT2H12NYTB - 1700V 1.2 OHM 4A SIC FET

Manufacturer Bilang Bahagi

SCT2H12NYTB

Internal Bilang Bahagi

AX-SCT2H12NYTB

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

1700V 1.2 OHM 4A SIC FET

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

127010 Pieces

reference Presyo

~~USD 2.2089~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SCT2H12NYTB sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SCT2H12NYTB

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SCT2H12NYTB

tagagawa : Rohm Semiconductor

paglalarawan : 1700V 1.2 OHM 4A SIC FET

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1700V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.1A, 18V

Vgs (th) (Max) @ Id : 4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs : 14nC @ 18V

Vgs (Max) : +22V, -6V

Input Capacitance (Ciss) (Max) @ Vds : 184pF @ 800V

Tampok ng FET : -

Power Dissipation (Max) : 44W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-268

Pakete / Kaso : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SCT , SCT2H

Mga dokumento para sa SCT2H12NYTB

datasheets : SCT2H12NYTB.pdf

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