C2M0080170P - ZFET SIC DMOSFET 1700V VDS RDS

Manufacturer Bilang Bahagi

C2M0080170P

Internal Bilang Bahagi

AX-C2M0080170P

tagagawa

Cree/Wolfspeed

Maikling Paglalarawan

ZFET SIC DMOSFET 1700V VDS RDS

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

20544 Pieces

reference Presyo

~~USD 21.84~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung C2M0080170P sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa C2M0080170P

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : C2M0080170P

tagagawa : Cree/Wolfspeed

paglalarawan : ZFET SIC DMOSFET 1700V VDS RDS

serye : C2M™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1700V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 40A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 20V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 28A, 20V

Vgs (th) (Max) @ Id : 4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs : 120nC @ 20V

Vgs (Max) : +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 1000V

Tampok ng FET : -

Power Dissipation (Max) : 277W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247-4L

Pakete / Kaso : TO-247-4

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : C2M , C2M00

Mga dokumento para sa C2M0080170P

datasheets : C2M0080170P.pdf

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