PSMN102-200Y,115 - MOSFET N-CH 200V 21.5A LFPAK

Manufacturer Bilang Bahagi

PSMN102-200Y,115

Internal Bilang Bahagi

AX-PSMN102-200Y,115

tagagawa

Nexperia USA Inc.

Maikling Paglalarawan

MOSFET N-CH 200V 21.5A LFPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

727210 Pieces

reference Presyo

~~USD 0.385806~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung PSMN102-200Y,115 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa PSMN102-200Y,115

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : PSMN102-200Y,115

tagagawa : Nexperia USA Inc.

paglalarawan : MOSFET N-CH 200V 21.5A LFPAK

serye : TrenchMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 21.5A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 102 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 30.7nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1568pF @ 30V

Tampok ng FET : -

Power Dissipation (Max) : 113W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : LFPAK56, Power-SO8

Pakete / Kaso : SC-100, SOT-669

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : PSMN1 , PSMN102-

Mga dokumento para sa PSMN102-200Y,115

datasheets : PSMN102-200Y,115.pdf

Kaugnay na mga produkto para sa PSMN102-200Y,115 Nexperia USA Inc.

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