RJK2006DPE-00#J3 - MOSFET N-CH 200V 40A LDPAK

Manufacturer Bilang Bahagi

RJK2006DPE-00#J3

Internal Bilang Bahagi

AX-RJK2006DPE-00#J3

tagagawa

Renesas Electronics America

Maikling Paglalarawan

MOSFET N-CH 200V 40A LDPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

17536 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung RJK2006DPE-00#J3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa RJK2006DPE-00#J3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : RJK2006DPE-00#J3

tagagawa : Renesas Electronics America

paglalarawan : MOSFET N-CH 200V 40A LDPAK

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 40A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 59 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 100W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-LDPAK

Pakete / Kaso : SC-83

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : RJK20 , RJK2006D

Mga dokumento para sa RJK2006DPE-00#J3

datasheets : RJK2006DPE-00#J3.pdf

Kaugnay na mga produkto para sa RJK2006DPE-00#J3 Renesas Electronics America

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