IXFT18N100Q3 - MOSFET N-CH 1000V 18A TO-268

Manufacturer Bilang Bahagi

IXFT18N100Q3

Internal Bilang Bahagi

AX-IXFT18N100Q3

tagagawa

IXYS

Maikling Paglalarawan

MOSFET N-CH 1000V 18A TO-268

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

42360 Pieces

reference Presyo

~~USD 7.9476~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IXFT18N100Q3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IXFT18N100Q3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IXFT18N100Q3

tagagawa : IXYS

paglalarawan : MOSFET N-CH 1000V 18A TO-268

serye : HiPerFET™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 1000V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 18A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 660 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 4890pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 830W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-268

Pakete / Kaso : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IXFT , IXFT18

Mga dokumento para sa IXFT18N100Q3

datasheets : IXFT18N100Q3.pdf

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