DMN30H4D0LFDE-7 - MOSFET N-CH 300V .55A 6UDFN

Manufacturer Bilang Bahagi

DMN30H4D0LFDE-7

Internal Bilang Bahagi

AX-DMN30H4D0LFDE-7

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET N-CH 300V .55A 6UDFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

2160740 Pieces

reference Presyo

~~USD 0.129846~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN30H4D0LFDE-7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN30H4D0LFDE-7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN30H4D0LFDE-7

tagagawa : Diodes Incorporated

paglalarawan : MOSFET N-CH 300V .55A 6UDFN

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 300V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 550mA (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.7V, 10V

Rds On (Max) @ Id, Vgs : 4 Ohm @ 300mA, 10V

Vgs (th) (Max) @ Id : 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.6nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 187.3pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 630mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : U-DFN2020-6 (Type E)

Pakete / Kaso : 6-UDFN Exposed Pad

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN30 , DMN30H4

Mga dokumento para sa DMN30H4D0LFDE-7

datasheets : DMN30H4D0LFDE-7.pdf

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