BAS316,H3F - DIODE GEN PURP 100V 250MA USC

Manufacturer Bilang Bahagi

BAS316,H3F

Internal Bilang Bahagi

AX-BAS316,H3F

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

DIODE GEN PURP 100V 250MA USC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

15281280 Pieces

reference Presyo

~~USD 0.01836~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BAS316,H3F sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BAS316,H3F

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BAS316,H3F

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : DIODE GEN PURP 100V 250MA USC

serye : -

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 100V

Kasalukuyang - Average na Rectified (Io) : 250mA

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.25V @ 150mA

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 3ns

Kasalukuyang - Reverse Leakage @ Vr : 200nA @ 80V

Capacitance @ Vr, F : 0.35pF @ 0V, 1MHz

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : SC-76, SOD-323

Package ng Tagabigay ng Device : USC

Operating temperatura - Junction : 150°C (Max)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BAS , BAS31

Mga dokumento para sa BAS316,H3F

datasheets : BAS316,H3F.pdf

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