IPD30N06S2L13ATMA4 - MOSFET N-CH 55V 30A TO252-3
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 55V 30A TO252-3
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
898880 Pieces
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung IPD30N06S2L13ATMA4 sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Mismong para sa IPD30N06S2L13ATMA4
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi :
IPD30N06S2L13ATMA4
tagagawa :
Infineon Technologies
paglalarawan :
MOSFET N-CH 55V 30A TO252-3
serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
13 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
136W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3-11
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
timbang :
-
kalagayan :
Bago at orihinal na
Mga dokumento para sa IPD30N06S2L13ATMA4
datasheets :
IPD30N06S2L13ATMA4.pdf
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