SQJQ900E-T1_GE3 - MOSFET 2 N-CH 40V POWERPAK8X8

Manufacturer Bilang Bahagi

SQJQ900E-T1_GE3

Internal Bilang Bahagi

AX-SQJQ900E-T1_GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2 N-CH 40V POWERPAK8X8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

371880 Pieces

reference Presyo

~~USD 0.754428~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SQJQ900E-T1_GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SQJQ900E-T1_GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SQJQ900E-T1_GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2 N-CH 40V POWERPAK8X8

serye : Automotive, AEC-Q101, TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 40V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Tc)

Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 5900pF @ 20V

Kapangyarihan - Max : 75W

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : PowerPAK® 8 x 8 Dual

Package ng Tagabigay ng Device : PowerPAK® 8 x 8 Dual

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SQJQ9 , SQJQ900

Mga dokumento para sa SQJQ900E-T1_GE3

datasheets : SQJQ900E-T1_GE3.pdf

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