TPH6R30ANL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Manufacturer Bilang Bahagi

TPH6R30ANL,L1Q

Internal Bilang Bahagi

AX-TPH6R30ANL,L1Q

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1102320 Pieces

reference Presyo

~~USD 0.25452~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TPH6R30ANL,L1Q sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPH6R30ANL,L1Q

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPH6R30ANL,L1Q

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : X35 PB-F POWER MOSFET TRANSISTOR

serye : U-MOSVIII-H

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 66A (Ta), 45A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 22.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 2.5W (Ta), 54W (Tc)

Temperatura ng pagpapatakbo : 150°C

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-SOP Advance (5x5)

Pakete / Kaso : 8-PowerVDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPH6 , TPH6R30

Mga dokumento para sa TPH6R30ANL,L1Q

datasheets : TPH6R30ANL,L1Q.pdf

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