SI6562CDQ-T1-GE3 - MOSFET N/P-CH 20V 6.7A 8-TSSOP

Manufacturer Bilang Bahagi

SI6562CDQ-T1-GE3

Internal Bilang Bahagi

AX-SI6562CDQ-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N/P-CH 20V 6.7A 8-TSSOP

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

966520 Pieces

reference Presyo

~~USD 0.29028~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI6562CDQ-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI6562CDQ-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI6562CDQ-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N/P-CH 20V 6.7A 8-TSSOP

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : N and P-Channel

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6.7A, 6.1A

Rds On (Max) @ Id, Vgs : 22 mOhm @ 5.7A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 10V

Kapangyarihan - Max : 1.6W, 1.7W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-TSSOP (0.173", 4.40mm Width)

Package ng Tagabigay ng Device : 8-TSSOP

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI656 , SI6562CD

Mga dokumento para sa SI6562CDQ-T1-GE3

datasheets : SI6562CDQ-T1-GE3.pdf

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