F1T3GHA1G - DIODE GEN PURP 200V 1A TS-1

Manufacturer Bilang Bahagi

F1T3GHA1G

Internal Bilang Bahagi

AX-F1T3GHA1G

tagagawa

Taiwan Semiconductor Corporation

Maikling Paglalarawan

DIODE GEN PURP 200V 1A TS-1

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

10187520 Pieces

reference Presyo

~~USD 0.02754~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung F1T3GHA1G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa F1T3GHA1G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : F1T3GHA1G

tagagawa : Taiwan Semiconductor Corporation

paglalarawan : DIODE GEN PURP 200V 1A TS-1

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 200V

Kasalukuyang - Average na Rectified (Io) : 1A

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 1A

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 150ns

Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V

Capacitance @ Vr, F : 15pF @ 4V, 1MHz

Uri ng Pag-mount : Through Hole

Pakete / Kaso : T-18, Axial

Package ng Tagabigay ng Device : TS-1

Operating temperatura - Junction : -55°C ~ 150°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : F1T , F1T3

Mga dokumento para sa F1T3GHA1G

datasheets : F1T3GHA1G.pdf

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