TPW1R306PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Manufacturer Bilang Bahagi

TPW1R306PL,L1Q

Internal Bilang Bahagi

AX-TPW1R306PL,L1Q

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

333995 Pieces

reference Presyo

~~USD 0.84~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TPW1R306PL,L1Q sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPW1R306PL,L1Q

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPW1R306PL,L1Q

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : X35 PB-F POWER MOSFET TRANSISTOR

serye : U-MOSIX-H

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 260A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 30V

Tampok ng FET : -

Power Dissipation (Max) : 960mW (Ta), 170W (Tc)

Temperatura ng pagpapatakbo : 175°C

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-DSOP Advance

Pakete / Kaso : 8-PowerVDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPW1 , TPW1R30

Mga dokumento para sa TPW1R306PL,L1Q

datasheets : TPW1R306PL,L1Q.pdf

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