NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

Manufacturer Bilang Bahagi

NVMFSW6D1N08HT1G

Internal Bilang Bahagi

AX-NVMFSW6D1N08HT1G

tagagawa

ON Semiconductor

Maikling Paglalarawan

T8 80V 1 PART PROLIFERATI

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

628655 Pieces

reference Presyo

~~USD 0.446292~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung NVMFSW6D1N08HT1G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa NVMFSW6D1N08HT1G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : NVMFSW6D1N08HT1G

tagagawa : ON Semiconductor

paglalarawan : T8 80V 1 PART PROLIFERATI

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 80V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 17A (Ta), 89A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2085pF @ 40V

Tampok ng FET : -

Power Dissipation (Max) : 3.8W (Ta), 104W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 5-DFN (5x6) (8-SOFL)

Pakete / Kaso : 8-PowerTDFN, 5 Leads

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : NVMFS , NVMFSW6D

Mga dokumento para sa NVMFSW6D1N08HT1G

datasheets : NVMFSW6D1N08HT1G.pdf

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