TK4A60D(STA4,Q,M) - MOSFET N-CH 600V 4A TO-220SIS

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 600V 4A TO-220SIS
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
9744 Pieces
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TK4A60D(STA4,Q,M) sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa TK4A60D(STA4,Q,M)

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : TK4A60D(STA4,Q,M)
tagagawa : Toshiba Semiconductor and Storage
paglalarawan : MOSFET N-CH 600V 4A TO-220SIS
serye : π-MOSVII
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.7 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 35W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220SIS
Pakete / Kaso : TO-220-3 Full Pack
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : TK4A6 , TK4A60D(

Mga dokumento para sa TK4A60D(STA4,Q,M)

datasheets : TK4A60D(STA4,Q,M).pdf

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