TK10A60D(STA4,Q,M) - MOSFET N-CH 600V 10A TO220SIS

Manufacturer Bilang Bahagi

TK10A60D(STA4,Q,M)

Internal Bilang Bahagi

AX-TK10A60D(STA4,Q,M)

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N-CH 600V 10A TO220SIS

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

473760 Pieces

reference Presyo

~~USD 0.5922~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TK10A60D(STA4,Q,M) sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TK10A60D(STA4,Q,M)

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TK10A60D(STA4,Q,M)

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N-CH 600V 10A TO220SIS

serye : π-MOSVII

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 750 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 45W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220SIS

Pakete / Kaso : TO-220-3 Full Pack

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TK10A6 , TK10A60D(

Mga dokumento para sa TK10A60D(STA4,Q,M)

datasheets : TK10A60D(STA4,Q,M).pdf

Kaugnay na mga produkto para sa TK10A60D(STA4,Q,M) Toshiba Semiconductor and Storage

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