FDFMA3N109 - MOSFET N-CH 30V 2.9A MICRO2X2

Manufacturer Bilang Bahagi

FDFMA3N109

Internal Bilang Bahagi

AX-FDFMA3N109

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET N-CH 30V 2.9A MICRO2X2

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1482160 Pieces

reference Presyo

~~USD 0.189294~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FDFMA3N109 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FDFMA3N109

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FDFMA3N109

tagagawa : ON Semiconductor

paglalarawan : MOSFET N-CH 30V 2.9A MICRO2X2

serye : PowerTrench®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.9A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 123 mOhm @ 2.9A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 3nC @ 4.5V

Vgs (Max) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 15V

Tampok ng FET : Schottky Diode (Isolated)

Power Dissipation (Max) : 1.5W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 6-MicroFET (2x2)

Pakete / Kaso : 6-VDFN Exposed Pad

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FDF , FDFMA

Mga dokumento para sa FDFMA3N109

datasheets : FDFMA3N109.pdf

Kaugnay na mga produkto para sa FDFMA3N109 ON Semiconductor

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