GPAS1006 MNG - DIODE GEN PURP 800V 10A TO263AB

Manufacturer Bilang Bahagi

GPAS1006 MNG

Internal Bilang Bahagi

AX-GPAS1006 MNG

tagagawa

Taiwan Semiconductor Corporation

Maikling Paglalarawan

DIODE GEN PURP 800V 10A TO263AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1791590 Pieces

reference Presyo

~~USD 0.1566~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung GPAS1006 MNG sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa GPAS1006 MNG

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : GPAS1006 MNG

tagagawa : Taiwan Semiconductor Corporation

paglalarawan : DIODE GEN PURP 800V 10A TO263AB

serye : -

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 800V

Kasalukuyang - Average na Rectified (Io) : 10A

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 10A

Bilis : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 800V

Capacitance @ Vr, F : 50pF @ 4V, 1MHz

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Package ng Tagabigay ng Device : TO-263AB (D²PAK)

Operating temperatura - Junction : -55°C ~ 150°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : GPAS , GPAS10

Mga dokumento para sa GPAS1006 MNG

datasheets : GPAS1006 MNG.pdf

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