DMN3190LDW-13 - MOSFET 2N-CH 30V 1A SOT363

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET 2N-CH 30V 1A SOT363
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
5964375 Pieces
reference Presyo
USD 0.04704
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN3190LDW-13 sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa DMN3190LDW-13

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : DMN3190LDW-13
tagagawa : Diodes Incorporated
paglalarawan : MOSFET 2N-CH 30V 1A SOT363
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1A
Rds On (Max) @ Id, Vgs : 190 mOhm @ 1.3A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 87pF @ 20V
Kapangyarihan - Max : 320mW
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device : SOT-363
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : DMN3 , DMN319

Mga dokumento para sa DMN3190LDW-13

datasheets : DMN3190LDW-13.pdf

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