DMN1017UCP3-7 - MOSFET N-CH 12V 7.5A X3-DSN1010

Manufacturer Bilang Bahagi

DMN1017UCP3-7

Internal Bilang Bahagi

AX-DMN1017UCP3-7

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET N-CH 12V 7.5A X3-DSN1010

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1963660 Pieces

reference Presyo

~~USD 0.142878~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN1017UCP3-7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN1017UCP3-7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN1017UCP3-7

tagagawa : Diodes Incorporated

paglalarawan : MOSFET N-CH 12V 7.5A X3-DSN1010

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 12V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7.5A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 3.3V

Rds On (Max) @ Id, Vgs : 17 mOhm @ 5A, 3.3V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 3.3V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 1503pF @ 6V

Tampok ng FET : -

Power Dissipation (Max) : 1.47W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : X3-DSN1010-3

Pakete / Kaso : 3-XDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN1 , DMN101

Mga dokumento para sa DMN1017UCP3-7

datasheets : DMN1017UCP3-7.pdf

Kaugnay na mga produkto para sa DMN1017UCP3-7 Diodes Incorporated

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