SI5509DC-T1-GE3 - MOSFET N/P-CH 20V 6.1A 1206-8

Manufacturer Bilang Bahagi

SI5509DC-T1-GE3

Internal Bilang Bahagi

AX-SI5509DC-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N/P-CH 20V 6.1A 1206-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

27818 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI5509DC-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI5509DC-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI5509DC-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N/P-CH 20V 6.1A 1206-8

serye : TrenchFET®

Katayuan ng Bahagi : Obsolete

Uri ng FET : N and P-Channel

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6.1A, 4.8A

Rds On (Max) @ Id, Vgs : 52 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 455pF @ 10V

Kapangyarihan - Max : 4.5W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-SMD, Flat Lead

Package ng Tagabigay ng Device : 1206-8 ChipFET™

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI550 , SI5509D

Mga dokumento para sa SI5509DC-T1-GE3

datasheets : SI5509DC-T1-GE3.pdf

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