IPG20N10S4L35ATMA1 - MOSFET 2N-CH 8TDSON

Manufacturer Bilang Bahagi

IPG20N10S4L35ATMA1

Internal Bilang Bahagi

AX-IPG20N10S4L35ATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET 2N-CH 8TDSON

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

990140 Pieces

reference Presyo

~~USD 0.283356~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IPG20N10S4L35ATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IPG20N10S4L35ATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IPG20N10S4L35ATMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET 2N-CH 8TDSON

serye : Automotive, AEC-Q101, OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A

Rds On (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 16µA

Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1105pF @ 25V

Kapangyarihan - Max : 43W

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerVDFN

Package ng Tagabigay ng Device : PG-TDSON-8-4

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IPG20N , IPG20N10S

Mga dokumento para sa IPG20N10S4L35ATMA1

datasheets : IPG20N10S4L35ATMA1.pdf

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