PMXB65UPEZ - MOSFET P-CH 12V 3.2A DFN1010D-3G

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET P-CH 12V 3.2A DFN1010D-3G
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
5242225 Pieces
reference Presyo
USD 0.05352
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung PMXB65UPEZ sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa PMXB65UPEZ

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : PMXB65UPEZ
tagagawa : Nexperia USA Inc.
paglalarawan : MOSFET P-CH 12V 3.2A DFN1010D-3G
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 72 mOhm @ 3.2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 634pF @ 6V
Tampok ng FET : -
Power Dissipation (Max) : 317mW (Ta), 8.33W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : DFN1010D-3
Pakete / Kaso : 3-XDFN Exposed Pad
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : PMX , PMXB6

Mga dokumento para sa PMXB65UPEZ

datasheets : PMXB65UPEZ.pdf

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