BSM180C12P2E202 - BSM180C12P2E202 IS A SIC SILICO

Manufacturer Bilang Bahagi

BSM180C12P2E202

Internal Bilang Bahagi

AX-BSM180C12P2E202

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

BSM180C12P2E202 IS A SIC SILICO

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9084 Pieces

reference Presyo

~~USD 340.2~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSM180C12P2E202 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSM180C12P2E202

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSM180C12P2E202

tagagawa : Rohm Semiconductor

paglalarawan : BSM180C12P2E202 IS A SIC SILICO

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiC (Silicon Carbide Junction Transistor)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 204A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 4V @ 35.2mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : +22V, -6V

Input Capacitance (Ciss) (Max) @ Vds : 20000pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 1360W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Chassis Mount

Package ng Tagabigay ng Device : Module

Pakete / Kaso : Module

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSM18 , BSM180C

Mga dokumento para sa BSM180C12P2E202

datasheets : BSM180C12P2E202.pdf

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