FQD19N10TM_F080 - MOSFET N-CH 100V 15.6A DPAK

Manufacturer Bilang Bahagi

FQD19N10TM_F080

Internal Bilang Bahagi

AX-FQD19N10TM_F080

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET N-CH 100V 15.6A DPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

7304 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung FQD19N10TM_F080 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FQD19N10TM_F080

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FQD19N10TM_F080

tagagawa : ON Semiconductor

paglalarawan : MOSFET N-CH 100V 15.6A DPAK

serye : QFET®

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 15.6A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 7.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 780pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 2.5W (Ta), 50W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : D-Pak

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FQD19 , FQD19N1

Mga dokumento para sa FQD19N10TM_F080

datasheets : FQD19N10TM_F080.pdf

Kaugnay na mga produkto para sa FQD19N10TM_F080 ON Semiconductor

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