PSMN8R5-108ESQ - MOSFET N-CH 108V 100A I2PAK

Manufacturer Bilang Bahagi

PSMN8R5-108ESQ

Internal Bilang Bahagi

AX-PSMN8R5-108ESQ

tagagawa

NXP USA Inc.

Maikling Paglalarawan

MOSFET N-CH 108V 100A I2PAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

24850 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung PSMN8R5-108ESQ sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa PSMN8R5-108ESQ

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : PSMN8R5-108ESQ

tagagawa : NXP USA Inc.

paglalarawan : MOSFET N-CH 108V 100A I2PAK

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 108V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Tj)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 5512pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 263W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : I2PAK

Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : PSMN , PSMN8R5

Mga dokumento para sa PSMN8R5-108ESQ

datasheets : PSMN8R5-108ESQ.pdf

Kaugnay na mga produkto para sa PSMN8R5-108ESQ NXP USA Inc.

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