TPH3206LDGB - GANFET N-CH 650V 16A PQFN

Manufacturer Bilang Bahagi

TPH3206LDGB

Internal Bilang Bahagi

AX-TPH3206LDGB

tagagawa

Transphorm

Maikling Paglalarawan

GANFET N-CH 650V 16A PQFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

51954 Pieces

reference Presyo

~~USD 6.48~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TPH3206LDGB sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPH3206LDGB

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPH3206LDGB

tagagawa : Transphorm

paglalarawan : GANFET N-CH 650V 16A PQFN

serye : -

Katayuan ng Bahagi : Not For New Designs

Uri ng FET : N-Channel

Teknolohiya : GaNFET (Gallium Nitride)

Drain sa Source Voltage (Vdss) : 650V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 16A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V

Vgs (th) (Max) @ Id : 2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V

Vgs (Max) : ±18V

Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V

Tampok ng FET : -

Power Dissipation (Max) : 81W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PQFN (8x8)

Pakete / Kaso : 3-PowerDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPH , TPH32

Mga dokumento para sa TPH3206LDGB

datasheets : TPH3206LDGB.pdf

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