DMN10H170SFG-7 - MOSFET N-CH 100V 2.9A POWERDI

Manufacturer Bilang Bahagi

DMN10H170SFG-7

Internal Bilang Bahagi

AX-DMN10H170SFG-7

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET N-CH 100V 2.9A POWERDI

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

23296 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMN10H170SFG-7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMN10H170SFG-7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMN10H170SFG-7

tagagawa : Diodes Incorporated

paglalarawan : MOSFET N-CH 100V 2.9A POWERDI

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.9A (Ta), 8.5A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 122 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 14.9nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 870.7pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 940mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PowerDI3333-8

Pakete / Kaso : 8-PowerWDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMN1 , DMN10H1

Mga dokumento para sa DMN10H170SFG-7

datasheets : DMN10H170SFG-7.pdf

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