1N8026-GA - DIODE SILICON 1.2KV 8A TO257

Manufacturer Bilang Bahagi

1N8026-GA

Internal Bilang Bahagi

AX-1N8026-GA

tagagawa

GeneSiC Semiconductor

Maikling Paglalarawan

DIODE SILICON 1.2KV 8A TO257

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9368 Pieces

reference Presyo

~~USD 124.86~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung 1N8026-GA sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 1N8026-GA

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 1N8026-GA

tagagawa : GeneSiC Semiconductor

paglalarawan : DIODE SILICON 1.2KV 8A TO257

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng Diode : Silicon Carbide Schottky

Boltahe - DC Reverse (Vr) (Max) : 1200V

Kasalukuyang - Average na Rectified (Io) : 8A (DC)

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.6V @ 2.5A

Bilis : No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr) : 0ns

Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 1200V

Capacitance @ Vr, F : 237pF @ 1V, 1MHz

Uri ng Pag-mount : Through Hole

Pakete / Kaso : TO-257-3

Package ng Tagabigay ng Device : TO-257

Operating temperatura - Junction : -55°C ~ 250°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 1N8 , 1N80

Mga dokumento para sa 1N8026-GA

datasheets : 1N8026-GA.pdf

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